遥遥领先的航天飞机晶振,Renesas晶振,XAH736049.152000I晶振，瑞萨晶振公司，Renesas晶振，石英晶振，六脚晶振，进口晶振，SMD晶振，小体积晶振，5032晶振，6G室外基站晶振，无人机晶振，6G路由器晶振，6G通讯终端晶振，航空航天晶振，瑞萨XA器件是超精密晶体振荡器，典型相位抖动为750至890fs，带宽为12kHz至20MHz。XA系列晶体振荡器的频率范围从0.750MHz到1350MHz，采用一系列专有的asic，重点关注降噪技术。三阶δ σ调制器将噪声降低到与传统的大块石英和SAW振荡器相当的水平。由于交货时间短、成本低、噪声低、频率范围宽、环境性能优异，XA器件是传统技术的最佳选择。XA设备的稳定性高达±25ppm，对于标准和定制频率都具有极快的交付速度。
遥遥领先的航天飞机晶振,Renesas晶振,XAH736049.152000I晶振
| Symbol | Parameter | Test Condition | Minimum | Typical | Maximum | Units | |
| F | 输出频率范围 | LVDS. | 0.75 | — | 1350 | MHz | |
| LVPECL. | 0.75 | — | 1350 | ||||
| LVCMOS. | 0.75 | — | 250 | ||||
| 频率容差 | Temperature = -40°C to +85°C. |
-25 -50 -100 |
— |
+25 +50 +100 |
ppm | ||
| Temperature = -40°C to +105°C. |
-50 -100 |
— |
+50 +100 |
ppm | |||
| 输出负载 | LVDS. | Differential. | — | 100 | — | Ω | |
| LVPECL. | VDD- 2.0V. | — | 50 | — | |||
| LVCMOS. | To GND. | — | 15 | — | pF | ||
| TST | 启动时间 | Output valid time after VDDmeets minimum specified level. | — | — | 10 | ms | |
| tR | 输出上升时间 | LVDS. | 20% to 80% Vpp. | — | — | 400 | ps |
| LVPECL. | — | — | 400 | ||||
| LVCMOS. | 10% to 90% VDD. | — | — | 3 | ns | ||
| tF | 输出下降时间 | LVDS. | 80% to 20% Vpp. | — | — | 400 | ps |
| LVPECL. | — | — | 400 | ||||
| LVCMOS. | 90% to 10% VDD. | — | — | 3 | ns | ||
| ODC | 输出时钟工作周期 | LVDS. | 45 | — | 55 | % | |
| LVPECL. | 45 | — | 55 | ||||
| LVCMOS. | FOUT<62.5MHz. | 45 | — | 55 | |||
| FOUT>62.5MHz. | 40 | — | 60 | ||||
| TOE | 输出启用/禁用时间 | — | — | — | 100 | ns | |
遥遥领先的航天飞机晶振,Renesas晶振,XAH736049.152000I晶振
| 原厂编码 | 生产商品牌 | 型号 | 频率 | 输出 | 电源电压 | 频率容差 |
| XAH526033.300000I | Renesas晶振 | XA | 33.3 MHz | LVCMOS | 2.5V | ±25ppm |
| XAH335033.333000X | Renesas晶振 | XA | 33.333 MHz | HCMOS | 3.3V | ±50ppm |
| XAH335033.333333X | Renesas晶振 | XA | 33.333333 MHz | HCMOS | 3.3V | ±50ppm |
| XAH335060.000000X | Renesas晶振 | XA | 60 MHz | HCMOS | 3.3V | ±50ppm |
| XAH335080.000000K | Renesas晶振 | XA | 80 MHz | LVCMOS | 3.3V | ±50ppm |
| XAH335100.000000K | Renesas晶振 | XA | 100 MHz | LVCMOS | 3.3V | ±50ppm |
| XAH535156.250000I | Renesas晶振 | XA | 156.25 MHz | LVCMOS | 3.3V | ±50ppm |
| XAH535080.000000K | Renesas晶振 | XA | 80 MHz | LVCMOS | 3.3V | ±50ppm |
| XAH525075.000000I | Renesas晶振 | XA | 75 MHz | LVCMOS | 2.5V | ±50ppm |
| XAH530050.000000I | Renesas晶振 | XA | 50 MHz | LVCMOS | 3.3V | ±100ppm |
| XAH335180.000000I | Renesas晶振 | XA | 180 MHz | HCMOS | 3.3V | ±50ppm |
| XAH336080.000000I | Renesas晶振 | XA | 80 MHz | HCMOS | 3.3V | ±25ppm |
| XAH730002.000000K | Renesas晶振 | XA | 2 MHz | HCMOS | 3.3V | ±100ppm |
| XAH535050.000000K | Renesas晶振 | XA | 50 MHz | HCMOS | 3.3V | ±50ppm |
| XAH525040.000000K | Renesas晶振 | XA | 40 MHz | HCMOS | 2.5V | ±50ppm |
| XAH325016.640000K | Renesas晶振 | XA | 16.64 MHz | HCMOS | 2.5V | ±50ppm |
| XAH730001.000000K | Renesas晶振 | XA | 1 MHz | HCMOS | 3.3V | ±100ppm |
| XAH335026.000000K | Renesas晶振 | XA | 26 MHz | HCMOS | 3.3V | ±50ppm |
| XAH335024.000000K | Renesas晶振 | XA | 24 MHz | HCMOS | 3.3V | ±50ppm |
| XAH535125.000000K | Renesas晶振 | XA | 125 MHz | HCMOS | 3.3V | ±50ppm |
| XAH335014.745600K | Renesas晶振 | XA | 14.7456 MHz | HCMOS | 3.3V | ±50ppm |
| XAL335150.000000K | Renesas晶振 | XA | 150 MHz | LVDS | 3.3V | ±50ppm |
| XAL335133.000000K | Renesas晶振 | XA | 133 MHz | LVDS | 3.3V | ±50ppm |
| XAH536198.354700I | Renesas晶振 | XA | 198.3547 MHz | HCMOS | 3.3V | ±25ppm |
| XAH336000.127774I | Renesas晶振 | XA | 127.774 kHz | HCMOS | 3.3V | ±25ppm |
| XAH730008.000000K | Renesas晶振 | XA | 8 MHz | HCMOS | 3.3V | ±100ppm |
| XAH335080.000000I | Renesas晶振 | XA | 80 MHz | HCMOS | 3.3V | ±50ppm |
| XAH335000.127722I | Renesas晶振 | XA | 127.722 kHz | HCMOS | 3.3V | ±50ppm |
| XAH335000.127774I | Renesas晶振 | XA | 127.774 kHz | HCMOS | 3.3V | ±50ppm |
| XAH535048.000000I | Renesas晶振 | XA | 48 MHz | HCMOS | 3.3V | ±50ppm |
| XAH730075.000000I | Renesas晶振 | XA | 75 MHz | HCMOS | 3.3V | ±100ppm |
| XAH336100.000000X | Renesas晶振 | XA | 100 MHz | HCMOS | 3.3V | ±25ppm |
| XAP520100.000000I | Renesas晶振 | XA | 100 MHz | LVPECL | 2.5V | ±100ppm |
| XAH536080.000000I | Renesas晶振 | XA | 80 MHz | LVCMOS | 3.3V | ±25ppm |
| XAH536125.000000I | Renesas晶振 | XA | 125 MHz | LVCMOS | 3.3V | ±25ppm |
| XAH536003.330000I | Renesas晶振 | XA | 3.33 MHz | LVCMOS | 3.3V | ±25ppm |
| XAH335003.200000K | Renesas晶振 | XA | 3.2 MHz | LVCMOS | 3.3V | ±50ppm |
| XAH335032.000000K | Renesas晶振 | XA | 32 MHz | LVCMOS | 3.3V | ±50ppm |
| XAH335006.005285K | Renesas晶振 | XA | 6.005285 MHz | LVCMOS | 3.3V | ±50ppm |
| XAH335054.000000K | Renesas晶振 | XA | 54 MHz | LVCMOS | 3.3V | ±50ppm |
| XAH325025.000000K | Renesas晶振 | XA | 25 MHz | LVCMOS | 2.5V | ±50ppm |
| XAH335050.000000K | Renesas晶振 | XA | 50 MHz | LVCMOS | 3.3V | ±50ppm |
| XAH536025.000000I | Renesas晶振 | XA | 25 MHz | HCMOS | 3.3V | ±25ppm |
| XAH736049.152000I | Renesas晶振 | XA | 49.152 MHz | HCMOS | 3.3V | ±25ppm |
| XAH736080.000000I | Renesas晶振 | XA | 80 MHz | HCMOS | 3.3V | ±25ppm |
| XAH736100.000000I | Renesas晶振 | XA | 100 MHz | HCMOS | 3.3V | ±25ppm |
| XAH335125.000000I | Renesas晶振 | XA | 125 MHz | HCMOS | 3.3V | ±50ppm |
| XAL335106.250000I | Renesas晶振 | XA | 106.25 MHz | LVDS | 3.3V | ±50ppm |
| XAL335106.000000I | Renesas晶振 | XA | 106 MHz | LVDS | 3.3V | ±50ppm |
| XAL335200.000000K | Renesas晶振 | XA | 200 MHz | LVDS | 3.3V | ±50ppm |
| XAL336200.000000I | Renesas晶振 | XA | 200 MHz | LVDS | 3.3V | ±25ppm |
| XAL335266.000000K | Renesas晶振 | XA | 266 MHz | LVDS | 3.3V | ±50ppm |
| XAL335300.000000K | Renesas晶振 | XA | 300 MHz | LVDS | 3.3V | ±50ppm |
| XAL335135.000000K | Renesas晶振 | XA | 135 MHz | LVDS | 3.3V | ±50ppm |
| XAL336125.000000I | Renesas晶振 | XA | 125 MHz | LVDS | 3.3V | ±25ppm |
| XAL325033.333300K | Renesas晶振 | XA | 33.3333 MHz | LVDS | 2.5V | ±50ppm |
| XAL336100.000000I | Renesas晶振 | XA | 100 MHz | LVDS | 3.3V | ±25ppm |
| XAL326033.333330I | Renesas晶振 | XA | 33.33333 MHz | LVDS | 2.5V | ±25ppm |
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